general description features this power mosfet is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. silicon gate for fast switching speeds low r ds(on) to minimize on-losses. specified at elevated temperature rugged C soa is power dissipation limited source-to-drain characterized for use with inductive loads absolute maximum ratings rating symbol value unit drain to current continuous pulsed i d i dm 18 72 a gate-to-source voltage continue non-repetitive v gs v gsm 20 40 v v total power dissipation derate above 25 p d 125 1.00 w w/ operating and storage temperature range t j , t stg -55 to 150 single pulse drain-to-source avalanche energy t j = 25 (v dd = 100v, v gs = 10v, i l = 18a, l = 1.38mh, r g = 25 ) e as 224 mj thermal resistance junction to case junction to ambient jc ja 1.00 62.5 /w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 (1) pulse width and frequency is limited by tj(max) and thermal response IRF640FP 18a 200v n channel power mosfet mechanical dimensions description IRF640FP ito-220ab dimension in mm d s g
electrical characteristics unless otherwise specified, t j = 25 . c irf640 characteristic symbol min typ max units drain-source breakdown voltage (v gs = 0 v, i d = 250 a) v (br)dss 200 v drain-source leakage current (v ds = rated v dss , v gs = 0 v) (v ds = 0.8rated v dss , v gs = 0 v, t j = 125 ) i dss 0.025 1.0 ma gate-source leakage current-forward (v gsf = 20 v, v ds = 0 v) i gssf 100 na gate-source leakage current-reverse (v gsr = 20 v, v ds = 0 v) i gssr 100 na gate threshold voltage (v ds = v gs , i d = 250 a) v gs(th) 2.0 4.0 v static drain-source on-resistance (v gs = 10 v, i d = 10a) * r ds(on) 0.18 drain-source on-voltage (v gs = 10 v) (i d = 5.0 a) v ds(on) 6.0 v forward transconductance (v ds = 50 v, i d = 10 a) * g fs 6.8 mhos input capacitance c iss 1600 pf output capacitance c oss 750 pf reverse transfer capacitance (v ds = 25 v, v gs = 0 v, f = 1.0 mhz) c rss 300 pf turn-on delay time t d(on) 30 ns rise time t r 60 ns turn-off delay time t d(off) 80 ns fall time (v dd = 30 v, i d = 10 a, v gs = 10 v, r g = 4.7 ) * t f 60 ns total gate charge q g 36 63 nc gate-source charge q gs 16 nc gate-drain charge (v ds = 0.8rated v dss , i d = rated i d , v gs = 10 v)* q gd 26 nc internal drain inductance (measured from the drain lead 0.25? from package to center of die) l d 4.5 nh internal drain inductance (measured from the source lead 0.25? from package to source bond pad) l s 7.5 nh source-drain diode characteristics forward on-voltage(1) v sd 1.5 v forward turn-on time t on ** ns reverse recovery time (i s = rated i d , d is /d t = 100a/s) t rr 450 ns * pulse test: pulse width 300s, duty cycle 2% ** negligible, dominated by circuit inductance IRF640FP 18a 200v n channel power mosfet
typical electrical characteristics irf 6 40fp 18a 200v n channel power mosfet
irf 6 40fp 18a 200v n channel power mosfet
irf 6 40fp 18a 200v n channel power mosfet
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